制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPC055N03L3X1SA1MOSFET N-CH 30V 1A SAWN ON FOIL Infineon Technologies |
4,365 | - |
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OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1A (Tj) | 4.5V, 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IRLR014NTRLMOSFET N-CH 55V 10A DPAK Infineon Technologies |
3,583 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9 nC @ 5 V | ±16V | 265 pF @ 25 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPD30N12S3L31ATMA2MOSFET_(120V 300V) Infineon Technologies |
2,247 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 30A (Tc) | 4.5V, 10V | 31mOhm @ 30A, 10V | 2.4V @ 29µA | 31 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IRLR3103TRRPBFMOSFET N-CH 30V 55A DPAK Infineon Technologies |
2,216 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50 nC @ 4.5 V | ±16V | 1600 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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SPB42N03S2L-13 GMOSFET N-CH 30V 42A TO263-3 Infineon Technologies |
2,342 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5 nC @ 10 V | ±20V | 1130 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRF7526D1TRPBFMOSFET P-CH 30V 2A MICRO8 Infineon Technologies |
2,297 | - |
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FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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IPD031N03LGBTMA1MOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
3,341 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IRF5803MOSFET P-CH 40V 3.4A MICRO6 Infineon Technologies |
2,666 | - |
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HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | - | 2W (Ta) | - | - | - | Surface Mount | Micro6™(TSOP-6) |
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BSO200P03SHXUMA1MOSFET P-CH 30V 7.4A 8DSO Infineon Technologies |
2,936 | - |
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.4A (Ta) | 10V | 20mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54 nC @ 10 V | ±25V | 2330 pF @ 25 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IPP033N04NF2SAKMA1TRENCH PG-TO220-3 Infineon Technologies |
3,199 | - |
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StrongIRFET™2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 113A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.4V @ 53µA | 68 nC @ 10 V | ±20V | 3200 pF @ 20 V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |