制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF8707GTRPBFMOSFET N-CH 30V 11A 8SO Infineon Technologies |
2,302 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3 nC @ 4.5 V | ±20V | 760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPD50R1K4CEBTMA1MOSFET N-CH 500V 3.1A TO252-3 Infineon Technologies |
3,979 | - |
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CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 1 nC @ 10 V | ±20V | 178 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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SPN03N60C3MOSFET N-CH 650V 700MA SOT223-4 Infineon Technologies |
3,356 | - |
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CoolMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 700mA (Ta) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IRF9520NPBFMOSFET P-CH 100V 6.8A TO220AB Infineon Technologies |
3,099 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | - | 480mOhm @ 4A, 10V | 4V @ 250µA | 27 nC @ 10 V | - | 350 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220AB |
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IRLL1503MOSFET N-CH 30V 75A SOT223 Infineon Technologies |
2,835 | - |
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HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Ta) | - | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200 nC @ 10 V | - | 5730 pF @ 25 V | - | - | - | - | - | Through Hole | SOT-223 |
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IRFU15N20DPBFMOSFET N-CH 200V 17A IPAK Infineon Technologies |
4,898 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 17A (Tc) | 10V | 165mOhm @ 10A, 10V | 5.5V @ 250µA | 41 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFB3607PBFXKMA1TRENCH 40<-<100V Infineon Technologies |
3,932 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tj) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPA65R1K5CEXKSA1MOSFET N-CH 650V 5.2A TO220 Infineon Technologies |
4,807 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRF5803TRMOSFET P-CH 40V 3.4A MICRO6 Infineon Technologies |
4,943 | - |
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HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
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IPD031N03M GMOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
4,323 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |