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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPF10N03LA GMOSFET N-CH 25V 30A TO252-3 Infineon Technologies |
4,364 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
|
IPU78CN10N GMOSFET N-CH 100V 13A TO251-3 Infineon Technologies |
2,943 |
|
Tabla de datos |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | 4V @ 12µA | 11 nC @ 10 V | ±20V | 716 pF @ 50 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IPC045N10N3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
3,198 |
|
Tabla de datos |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 33µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
|
IRF5804MOSFET P-CH 40V 2.5A MICRO6 Infineon Technologies |
2,816 |
|
Tabla de datos |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 2W (Ta) | - | - | - | Surface Mount | Micro6™(TSOP-6) |
|
|
SPD30N03S2L10TMOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
4,006 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IRFL1006TRMOSFET N-CH 60V 1.6A SOT223 Infineon Technologies |
2,132 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8 nC @ 10 V | ±20V | 160 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
SPI10N10MOSFET N-CH 100V 10.3A TO262-3 Infineon Technologies |
4,552 |
|
Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4 nC @ 10 V | ±20V | 426 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPS80R1K4P7AKMA1MOSFET N-CH 800V 4A TO251-3 Infineon Technologies |
4,352 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10 nC @ 10 V | ±20V | - | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPA60R1K5CEXKSA1MOSFET N-CH 600V 5A TO220 Infineon Technologies |
4,153 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 20W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRFZ44ZPBFMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
2,099 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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