制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPAN70R900P7SXKSA1MOSFET N-CH 700V 6A TO220 Infineon Technologies |
2,773 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8 nC @ 10 V | ±16V | 211 pF @ 400 V | - | 17.9W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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BSO094N03SMOSFET N-CH 30V 10A 8DSO Infineon Technologies |
2,050 | - |
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 2V @ 30µA | 18 nC @ 5 V | ±20V | 2300 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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BSC059N03STMOSFET N-CH 30V 19A/89A TDSON Infineon Technologies |
2,348 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 89A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | 2V @ 35µA | 21 nC @ 5 V | ±20V | 2670 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPP093N06N3GHKSA1MOSFET N-CH 60V 50A TO220-3 Infineon Technologies |
3,799 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | 4V @ 34µA | 36 nC @ 10 V | ±20V | 2900 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP114N03L GMOSFET N-CH 30V 30A TO220-3 Infineon Technologies |
4,889 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF7422D2TRMOSFET P-CH 20V 4.3A 8SO Infineon Technologies |
3,553 | - |
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FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 610 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRLR3802TRLPBFMOSFET N-CH 12V 84A DPAK Infineon Technologies |
3,382 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 84A (Tc) | 2.8V, 4.5V | 8.5mOhm @ 15A, 4.5V | 1.9V @ 250µA | 41 nC @ 5 V | ±12V | 2490 pF @ 6 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPU039N03LGXKMOSFET N-CH 30V 50A TO251-3 Infineon Technologies |
4,108 | - |
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OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 3.9mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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SPD22N08S2L-50MOSFET N-CH 75V 25A TO252-3 Infineon Technologies |
3,043 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 25A (Tc) | 4.5V, 10V | 50mOhm @ 11A, 10V | 2V @ 31µA | 33 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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SPD30N06S2L-23MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
2,485 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1390 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |