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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6100MOSFET P-CH 20V 5.1A 4FLIPFET Infineon Technologies |
4,495 |
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Tabla de datos |
HEXFET® | 4-FlipFet™ | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.1A (Ta) | 2.5V, 4.5V | 65mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 21 nC @ 5 V | ±12V | 1230 pF @ 15 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-FlipFet™ |
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IRF7807TRMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
2,865 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRLU3714ZPBFMOSFET N-CH 20V 37A I-PAK Infineon Technologies |
3,461 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1 nC @ 4.5 V | ±20V | 560 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IPS60R360PFD7SAKMA1MOSFET N-CH 650V 10A TO251-3 Infineon Technologies |
3,800 |
|
Tabla de datos |
CoolMOS™PFD7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | ±20V | 534 pF @ 400 V | - | 43W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IRLR7807ZCTRRPMOSFET N-CH 30V 43A DPAK Infineon Technologies |
4,264 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11 nC @ 4.5 V | ±20V | 780 pF @ 15 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPB79CN10N GMOSFET N-CH 100V 13A D2PAK Infineon Technologies |
3,739 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 79mOhm @ 13A, 10V | 4V @ 12µA | 11 nC @ 10 V | ±20V | 716 pF @ 50 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRLMS5703TRPBFMOSFET P-CH 30V 2.4A MICRO6 Infineon Technologies |
4,870 |
|
Tabla de datos |
HEXFET® | SOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.4A (Ta) | 4.5V, 10V | 180mOhm @ 1.6A, 10V | 1V @ 250µA | 11 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
|
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IPD60R600E6ATMA1MOSFET N-CH 600V 7.3A TO252 Infineon Technologies |
2,972 |
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Tabla de datos |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | - | - | - | Surface Mount | PG-TO252-3 |
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IRLL014NTRMOSFET N-CH 55V 2A SOT223 Infineon Technologies |
3,125 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14 nC @ 10 V | ±16V | 230 pF @ 25 V | - | 1W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-223-4 |
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IPA70R750P7SXKSA1MOSFET N-CH 700V 6.5A TO220 Infineon Technologies |
3,163 |
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Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3 nC @ 400 V | ±16V | 306 pF @ 400 V | - | 21.2W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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