制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSF045N03MQ3 GMOSFET N-CH 30V 18A/63A 2WDSON Infineon Technologies |
2,519 | - |
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OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.2V @ 250µA | 34 nC @ 10 V | ±20V | 2600 pF @ 15 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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IRLR7833TRLPBFMOSFET N-CH 30V 140A DPAK Infineon Technologies |
3,504 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4010 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFR4105ZTRRPBFMOSFET N-CH 55V 30A DPAK Infineon Technologies |
4,963 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPB11N03LAMOSFET N-CH 25V 30A TO263-3 Infineon Technologies |
2,617 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 11.2mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPN02N60S5MOSFET N-CH 600V 400MA SOT223-4 Infineon Technologies |
2,070 | - |
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CoolMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 400mA (Ta) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 7.4 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IPS70R360P7SAKMA1MOSFET N-CH 700V 12.5A TO251-3 Infineon Technologies |
2,149 | - |
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CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4 nC @ 10 V | ±16V | 517 pF @ 400 V | - | 59.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IRFR120NCTRLPBFMOSFET N-CH 100V 9.4A DPAK Infineon Technologies |
4,633 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Ta) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPA70R900P7SXKSA1MOSFET N-CH 700V 6A TO220 Infineon Technologies |
4,957 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | ±16V | 211 pF @ 400 V | - | 20.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPF09N03LAMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
4,736 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 8.6mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
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IPF09N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
2,288 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 8.6mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |