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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSF083N03LQ GMOSFET N-CH 30V 13A/53A 2WDSON Infineon Technologies |
4,885 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 53A (Tc) | 4.5V, 10V | 8.3mOhm @ 20A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | ±20V | 1800 pF @ 15 V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
IRF5802MOSFET N-CH 150V 900MA MICRO6 Infineon Technologies |
3,141 |
|
Tabla de datos |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 900mA (Ta) | 10V | 1.2Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8 nC @ 10 V | ±30V | 88 pF @ 25 V | - | 2W (Ta) | - | - | - | Surface Mount | Micro6™(TSOP-6) |
|
IPD65R1K4CFDATMA2MOSFET N-CH 650V 2.8A TO252-3 Infineon Technologies |
2,227 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10 nC @ 10 V | ±20V | 262 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPP080N03L GMOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
3,317 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | ±20V | 1900 pF @ 15 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRLIZ34NPBFMOSFET N-CH 55V 22A TO220AB FP Infineon Technologies |
3,881 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 22A (Tc) | 4V, 10V | 35mOhm @ 12A, 10V | 2V @ 250µA | 25 nC @ 5 V | ±16V | 880 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
|
IPD60R280P7SE8228AUMA1MOSFET N-CH 600V 12A TO252-3 Infineon Technologies |
3,686 |
|
- |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IRFR1205TRRPBFMOSFET N-CH 55V 44A DPAK Infineon Technologies |
3,625 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
BSB053N03LP GMOSFET N-CH 30V 17A/71A 2WDSON Infineon Technologies |
2,074 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29 nC @ 10 V | ±20V | 2700 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
|
IPP096N03L GMOSFET N-CH 30V 35A TO220-3 Infineon Technologies |
4,437 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
SPD30N06S2-23MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
3,725 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 23mOhm @ 21A, 10V | 4V @ 50µA | 32 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | - | - | - | - | Surface Mount | PG-TO252-3-11 |
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