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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD78CN10NGBUMA1MOSFET N-CH 100V 13A TO252-3 Infineon Technologies |
2,347 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | 4V @ 12µA | 11 nC @ 10 V | ±20V | 716 pF @ 50 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPP147N03L GMOSFET N-CH 30V 20A TO220-3 Infineon Technologies |
4,269 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IRLR2905PBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
3,757 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPB114N03L GMOSFET N-CH 30V 30A D2PAK Infineon Technologies |
4,572 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
SPU11N10MOSFET N-CH 100V 10.5A TO251-3 Infineon Technologies |
3,589 |
|
Tabla de datos |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.5A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | P-TO251-3-1 |
|
IRF7233TRMOSFET P-CH 12V 9.5A 8SO Infineon Technologies |
4,145 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA (Min) | 74 nC @ 5 V | ±12V | 6000 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7220GTRPBFMOSFET P-CH 14V 11A 8SO Infineon Technologies |
3,562 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 14 V | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | 600mV @ 250µA (Min) | 125 nC @ 5 V | ±12V | 8075 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRLR3717TRLPBFMOSFET N-CH 20V 120A DPAK Infineon Technologies |
3,628 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31 nC @ 4.5 V | ±20V | 2830 pF @ 10 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPD60R460CEAUMA1CONSUMER Infineon Technologies |
3,131 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.1A (Tj) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 74W | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |
|
BSS205NL6327HTSA1MOSFET N-CH 20V 2.5A SOT23-3 Infineon Technologies |
3,407 |
|
Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2.5V, 4.5V | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2 nC @ 4.5 V | ±12V | 419 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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