制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSP317PE6327TMOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies |
2,175 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | ±20V | 262 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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SPB08P06PMOSFET P-CH 60V 8.8A TO263-3 Infineon Technologies |
4,963 | - |
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SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Ta) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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BSP317PE6327MOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies |
3,914 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | ±20V | 262 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IPC045N10L3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
2,038 | - |
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OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | 2.1V @ 33µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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IPD088N06N3GATMA1MOSFET N-CH 60V 50A TO252-3 Infineon Technologies |
2,538 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 34µA | 48 nC @ 10 V | ±20V | 3900 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-311 |
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IPL60R1K5C6SATMA1MOSFET N-CH 600V 3A THIN-PAK Infineon Technologies |
4,164 | - |
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CoolMOS™ C6 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-ThinPak (5x6) |
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IRF5803D2PBFMOSFET P-CH 40V 3.4A 8SO Infineon Technologies |
4,565 | - |
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FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7807ATRMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
3,843 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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SPN02N60C3MOSFET N-CH 650V 400MA SOT223-4 Infineon Technologies |
4,550 | - |
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CoolMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 400mA (Ta) | 10V | 2.5Ohm @ 1.1A, 10V | 3.9V @ 80µA | 13 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSD214SN L6327MOSFET N-CH 20V 1.5A SOT363-6 Infineon Technologies |
2,281 | - |
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OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | ±12V | 143 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT363-PO |