制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPD06P004NSAUMA1MOSFET P-CH 60V 16.4A TO252 Infineon Technologies |
3,755 | - |
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- |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
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IRF5805TRPBFMOSFET P-CH 30V 3.8A MICRO6 Infineon Technologies |
4,209 | - |
|
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HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 511 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
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IPD50R3K0CEBTMA1MOSFET N-CH 500V 1.7A TO252-3 Infineon Technologies |
2,560 | - |
|
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CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPU64CN10N GMOSFET N-CH 100V 17A TO251-3 Infineon Technologies |
2,313 | - |
|
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OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 64mOhm @ 17A, 10V | 4V @ 20µA | 9 nC @ 10 V | ±20V | 569 pF @ 50 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPC60N04S406ATMA1MOSFET N-CH 40V 60A TDSON-8-23 Infineon Technologies |
2,982 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 10V | 6mOhm @ 30A, 10V | 4V @ 30µA | 33 nC @ 10 V | ±20V | 2650 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-23 |
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IPC60N04S4L06ATMA1MOSFET N-CH 40V 60A TDSON-8-23 Infineon Technologies |
2,158 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.2V @ 30µA | 43 nC @ 10 V | ±16V | 3600 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-23 |
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IRF7380TRPBFXTMA1PLANAR 40<-<100V Infineon Technologies |
2,788 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPU30N03S2L-10MOSFET N-CH 30V 30A TO251-3 Infineon Technologies |
4,246 | - |
|
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OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 39.4 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | P-TO251-3-1 |
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SPD07N20MOSFET N-CH 200V 7A TO252-3 Infineon Technologies |
3,263 | - |
|
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SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD49CN10N GMOSFET N-CH 100V 20A TO252-3 Infineon Technologies |
4,212 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 49mOhm @ 20A, 10V | 4V @ 20µA | 16 nC @ 10 V | ±20V | 1090 pF @ 50 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |