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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD64CN10N GMOSFET N-CH 100V 17A TO252-3 Infineon Technologies |
4,121 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 64mOhm @ 17A, 10V | 4V @ 20µA | 9 nC @ 10 V | ±20V | 569 pF @ 50 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPS60R600PFD7SAKMA1MOSFET N-CH 650V 6A TO251-3 Infineon Technologies |
4,465 |
|
Tabla de datos |
CoolMOS™PFD7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4.5V @ 80µA | 8.5 nC @ 10 V | ±20V | 344 pF @ 400 V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
|
SPD02N50C3MOSFET N-CH 560V 1.8A TO252-3 Infineon Technologies |
3,630 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 9 nC @ 10 V | ±20V | 190 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
IRFR3711ZTRRPBFMOSFET N-CH 20V 93A DPAK Infineon Technologies |
3,817 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2160 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSP129E6327MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
2,950 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7 nC @ 5 V | ±20V | 108 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
IPS80R2K0P7AKMA1MOSFET N-CH 800V 3A TO251-3 Infineon Technologies |
3,932 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9 nC @ 10 V | ±20V | 175 pF @ 500 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-342 |
|
BSS315PL6327HTSA1MOSFET P-CH 30V 1.5A SOT23-3 Infineon Technologies |
2,545 |
|
Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4.5V, 10V | 150mOhm @ 1.5A, 10V | 2V @ 11µA | 2.3 nC @ 5 V | ±20V | 282 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
|
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IPD040N03LGBTMA1MOSFET N-CH 30V 90A TO252-31 Infineon Technologies |
3,489 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
SPN01N60C3MOSFET N-CH 650V 300MA SOT223-4 Infineon Technologies |
3,953 |
|
Tabla de datos |
CoolMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 300mA (Ta) | 10V | 6Ohm @ 500mA, 10V | 3.7V @ 250µA | 5 nC @ 10 V | ±20V | 100 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
|
SPD11N10MOSFET N-CH 100V 10.5A TO252-3 Infineon Technologies |
4,662 |
|
Tabla de datos |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.5A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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