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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPD26N06S2L-35MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
2,044 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 35mOhm @ 13A, 10V | 2V @ 26µA | 24 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
SPU08P06PMOSFET P-CH 60V 8.83A TO251-3 Infineon Technologies |
3,546 |
|
Tabla de datos |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.83A (Ta) | - | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13 nC @ 10 V | - | 420 pF @ 25 V | - | 42W (Tc) | - | - | - | Through Hole | PG-TO251-3 |
|
BSS7728NH6327XTSA2MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
2,352 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5 nC @ 10 V | ±20V | 56 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT23 |
|
SI3443DVMOSFET P-CH 20V 4.4A MICRO6 Infineon Technologies |
3,741 |
|
Tabla de datos |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15 nC @ 4.5 V | ±12V | 1079 pF @ 10 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
|
SPU09P06PLMOSFET P-CH 60V 9.7A TO251-3 Infineon Technologies |
3,030 |
|
Tabla de datos |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | 2V @ 250µA | 21 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | P-TO251-3-1 |
|
BSP129E6327TMOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
4,414 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7 nC @ 5 V | ±20V | 108 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
BSO613SPVMOSFET P-CH 60V 3.44A 8DSO Infineon Technologies |
2,311 |
|
Tabla de datos |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | 4V @ 1mA | 30 nC @ 10 V | ±20V | 875 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
|
SPD30N03S2L-10MOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
4,474 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IRLML5203MOSFET P-CH 30V 3A MICRO3/SOT23 Infineon Technologies |
4,061 |
|
Tabla de datos |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 4.5V, 10V | 98mOhm @ 3A, 10V | 2.5V @ 250µA | 14 nC @ 10 V | ±20V | 510 pF @ 25 V | - | 1.25W (Ta) | - | - | - | Surface Mount | Micro3™/SOT-23 |
|
|
IPD050N03LGBTMA1MOSFET N-CH 30V 50A TO252-31 Infineon Technologies |
3,112 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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