制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPB14N03LAMOSFET N-CH 25V 30A TO263-3 Infineon Technologies |
4,094 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 13.6mOhm @ 30A, 10V | 2V @ 20µA | 8.3 nC @ 5 V | ±20V | 1043 pF @ 15 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPS65R1K0CEAKMA2MOSFET N-CH 650V 7.2A TO251-3 Infineon Technologies |
4,959 | - |
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CoolMOS™ CE | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-342 |
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BSP171PE6327TMOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
4,647 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20 nC @ 10 V | ±20V | 460 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSP295E6327MOSFET N-CH 60V 1.8A SOT223-4 Infineon Technologies |
3,360 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17 nC @ 10 V | ±20V | 368 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSZ0502NSIATMA1MOSFET N-CH 30V 22A/40A TSDSON Infineon Technologies |
4,152 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2V @ 250µA | 26 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 2.1W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IRF7821PBFMOSFET N-CH 30V 13.6A 8SO Infineon Technologies |
4,924 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SO |
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BSS215PL6327HTSA1MOSFET P-CH 20V 1.5A SOT23-3 Infineon Technologies |
3,199 | - |
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OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.5A, 4.5V | 1.2V @ 11µA | 3.6 nC @ 4.5 V | ±12V | 346 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSP171PE6327MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
2,634 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20 nC @ 10 V | ±20V | 460 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IRF5800TRMOSFET P-CH 30V 4A MICRO6 Infineon Technologies |
4,749 | - |
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HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | 1V @ 250µA | 17 nC @ 10 V | ±20V | 535 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
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SPD25N06S2-40MOSFET N-CH 55V 29A TO252-3 Infineon Technologies |
4,908 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 13A, 10V | 4V @ 26µA | 18 nC @ 10 V | ±20V | 710 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |