制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPD30N03S2L20ATMA1MOSFET N-CH 30V 30A TO252-31 Infineon Technologies |
283 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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SPP80N04S2L-03MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 80A, 10V | 2V @ 250µA | 213 nC @ 10 V | ±20V | 7930 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPW65R280C6FKSA1MOSFET N-CH 650V 13.8A TO247-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPA50R250CPXKSA1MOSFET N-CH 500V 13A TO220-FP Infineon Technologies |
0 | - |
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CoolMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IRF7821TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
3,107 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-DSO-8-902 |
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IRLR4132TRPBFMOSFET N-CH 30V 160A DPAK Infineon Technologies |
2,925 | - |
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- | - | Tape & Reel (TR) | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRFSL6535MOSFET N-CH 300V 19A TO262-3 Infineon Technologies |
0 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-901 |
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IPAN60R600P7SXKSA1MOSFET N-CH 650V 6A TO220 Infineon Technologies |
397 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPW65R280E6FKSA1MOSFET N-CH 650V 13.8A TO247-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPI032N06N3GAKSA1MOSFET N-CH 60V 120A TO262-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |