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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFHM830TRPBFMOSFET N-CH 30V 21A/40A PQFN Infineon Technologies |
7,703 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.35V @ 50µA | 31 nC @ 10 V | ±20V | 2155 pF @ 25 V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN-Dual (3.3x3.3) |
|
IPA60R250CPXKSA1MOSFET N-CH 650V 12A TO220-FP Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35 nC @ 10 V | ±20V | 1300 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IPD65R600C6BTMA1MOSFET N-CH 650V 7.3A TO252-3 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPAN60R360P7SXKSA1MOSFET N-CH 650V 9A TO220 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
IPI90N06S4L04AKSA2MOSFET N-CH 60V 90A TO262-3 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPP06CN10LGN-CHANNEL POWER MOSFET Infineon Technologies |
490 |
|
Tabla de datos |
OptiMOS™ 2 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 6.2mOhm @ 100A, 10V | 2.4V @ 180µA | 124 nC @ 10 V | ±20V | 11900 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRF2805SPBFMOSFET N-CH 55V 135A D2PAK Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPAN70R750P7SXKSA1MOSFET N-CH 700V 6.5A TO220 Infineon Technologies |
116 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3 nC @ 10 V | ±16V | 306 pF @ 400 V | - | 20.8W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRF6619TR1PBFMOSFET N-CH 20V 30A DIRECTFET Infineon Technologies |
2,000 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.45V @ 250µA | 57 nC @ 4.5 V | ±20V | 5040 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
AUIRL3705ZSMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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