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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPSA70R360P7SAKMA1MOSFET N-CH 700V 12.5A TO251-3 Infineon Technologies |
345 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4 nC @ 400 V | ±16V | 517 pF @ 400 V | - | 59.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IPI65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO262-3 Infineon Technologies |
4,142 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IRFB3256PBFMOSFET N-CH 60V 75A TO220AB Infineon Technologies |
3,134 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 3.4mOhm @ 75A, 10V | 4V @ 150µA | 195 nC @ 10 V | ±20V | 6600 pF @ 48 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SPB100N04S2-04MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
4,142 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 7220 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPAN80R280P7XKSA1MOSFET N-CH 800V 17A TO220 Infineon Technologies |
4,590 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
|
IRF7403TRPBFMOSFET N-CH 30V 8.5A 8SO Infineon Technologies |
2,774 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 4A, 10V | 1V @ 250µA | 57 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IPB03N03LB GMOSFET N-CH 30V 80A D2PAK Infineon Technologies |
787 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.8mOhm @ 55A, 10V | 2V @ 100µA | 59 nC @ 5 V | ±20V | 7624 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPLK60R1K0PFD7ATMA1MOSFET N-CH 600V 5.2A THIN-PAK Infineon Technologies |
4,590 |
|
Tabla de datos |
CoolMOS™ PFD7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.2A (Tc) | 10V | 1Ohm @ 1A, 10V | 4.5V @ 50µA | 6 nC @ 10 V | ±20V | 230 pF @ 400 V | - | 31.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-52 |
|
|
IPAN50R500CEXKSA1MOSFET N-CH 500V 11.1A TO220 Infineon Technologies |
406 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.1A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPP80N08S406AKSA1MOSFET N-CH 80V 80A TO220-3 Infineon Technologies |
3,451 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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