制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFH7932TRPBFMOSFET N-CH 30V 24A/104A PQFN Infineon Technologies |
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HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 104A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.35V @ 100µA | 51 nC @ 4.5 V | ±20V | 4270 pF @ 15 V | - | 3.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
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IPD65R420CFDBTMA1MOSFET N-CH 650V 8.7A TO252-3 Infineon Technologies |
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CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP80N06S2LH5AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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OptiMOS™ 3 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2V @ 250µA | 190 nC @ 10 V | ±20V | 5000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRFR3910TRLPBFMOSFET N-CH 100V 16A DPAK Infineon Technologies |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC026N02KSGAUMA1MOSFET N-CH 20V 25A/100A TDSON Infineon Technologies |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 25A (Ta), 100A (Tc) | 2.5V, 4.5V | 2.6mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7 nC @ 4.5 V | ±12V | 7800 pF @ 10 V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPP80N06S2H5AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 230µA | 155 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRFI7536GPBFMOSFET N-CH 60V 86A TO220 Infineon Technologies |
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HEXFET® | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 86A (Tc) | 10V | 3.4mOhm @ 75A, 10V | 4V @ 150µA | 195 nC @ 10 V | ±20V | 6600 pF @ 48 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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IPP80N06S2L07AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S207AKSA4MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPI80N06S207AKSA2MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |