制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPW60R280C6FKSA1MOSFET N-CH 600V 13.8A TO247-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-247-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPP100N04S2L03AKSA1MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPD65R600E6BTMA1MOSFET N-CH 650V 7.3A TO252-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPB60R250CPATMA1MOSFET N-CH 600V 12A TO263-3 Infineon Technologies |
0 | - |
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CoolMOS™ CP | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35 nC @ 10 V | ±20V | 1200 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPI60R280C6XKSA1MOSFET N-CH 600V 13.8A TO262-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPD03N03LA GMOSFET N-CH 25V 90A TO252-3 Infineon Technologies |
1,033 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 90A (Tc) | 4.5V, 10V | 3.2mOhm @ 60A, 10V | 2V @ 70µA | 41 nC @ 5 V | ±20V | 5200 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPP60R280E6XKSA1MOSFET N-CH 600V 13.8A TO220-3 Infineon Technologies |
0 | - |
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CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPI072N10N3GXKSA1MOSFET N-CH 100V 80A TO262-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68 nC @ 10 V | ±20V | 4910 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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BSC882N03MSGATMA1MOSFET N-CH 34V 22A/100A TDSON Infineon Technologies |
0 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPLK60R1K5PFD7ATMA1MOSFET N-CH 600V 3.8A THIN-PAK Infineon Technologies |
4,968 | - |
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CoolMOS™ PFD7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.8A (Tc) | 10V | 1.5Ohm @ 700mA, 10V | 4.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 169 pF @ 400 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-52 |