制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFH5104TR2PBFMOSFET N-CH 40V 24A/100A PQFN Infineon Technologies |
336 | - |
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HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80 nC @ 10 V | ±20V | 3120 pF @ 25 V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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IPA70R450P7SXKSA1MOSFET N-CH 700V 10A TO220 Infineon Technologies |
0 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1 nC @ 400 V | ±16V | 424 pF @ 400 V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRFH5304TRPBFMOSFET N-CH 30V 22A/79A 8PQFN Infineon Technologies |
1 | - |
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HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 79A (Tc) | 4.5V, 10V | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41 nC @ 10 V | ±20V | 2360 pF @ 10 V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IPP100N04S204AKSA2MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
9,116 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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ISK024NE2LM5AULA1TRENCH <= 40V PG-VSON-6 Infineon Technologies |
7,515 | - |
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OptiMOS™ 5 | 6-PowerVDFN | Tape & Reel (TR) | Discontinued at Digi-Key | - | MOSFET (Metal Oxide) | 40 V | - | - | - | - | - | ±16V | - | - | - | - | - | - | Surface Mount | 6-PQFN Dual (2x2) |
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IPSA70R450P7SAKMA1MOSFET N-CH 700V 10A TO251-3 Infineon Technologies |
1,481 | - |
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CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1 nC @ 400 V | ±16V | 424 pF @ 400 V | - | 50W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPB90N06S404ATMA2MOSFET N-CH 60V 90A D2PAK Infineon Technologies |
0 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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BSP321PH6327XTSA1MOSFET P-CH 100V 980MA SOT223-4 Infineon Technologies |
357 | - |
|
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SIPMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 980mA (Tc) | 10V | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12 nC @ 10 V | ±20V | 319 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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SPB80N03S203GATMA1MOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPP100N03S2-03MOSFET N-CH 30V 100A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |