制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF8306MTRPBFMOSFET N-CH 30V 23A DIRECTFET Infineon Technologies |
4,791 | - |
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HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 38 nC @ 4.5 V | ±20V | 4110 pF @ 15 V | Schottky Diode (Body) | 2.1W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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AUIRFS8403TRLMOSFET N-CH 40V 123A D2PAK Infineon Technologies |
3,354 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF8113TRPBFMOSFET N-CH 30V 17.2A 8SO Infineon Technologies |
165 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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AUIRFN7110TRMOSFET N-CH 100V 58A 8PQFN Infineon Technologies |
2,967 | - |
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HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 58A (Tc) | 10V | 14.5mOhm @ 35A, 10V | 4V @ 100µA | 74 nC @ 10 V | ±20V | 3050 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-PQFN (5x6) |
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IPI50N10S3L16AKSA1MOSFET N-CH 100V 50A TO262-3 Infineon Technologies |
2,763 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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BSC084P03NS3EGATMA1MOSFET P-CH 30V 14.9A 8TDSON Infineon Technologies |
3,019 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 14.9A (Ta), 78.6A (Tc) | 6V, 10V | 8.4mOhm @ 50A, 10V | 3V @ 110µA | 57.7 nC @ 10 V | ±25V | 4240 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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IPI60R299CPXKSA1MOSFET N-CH 600V 11A TO262-3 Infineon Technologies |
3,397 | - |
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CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI90N06S404AKSA2MOSFET N-CHANNEL_55/60V Infineon Technologies |
25,000 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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IPB80N07S405ATMA1MOSFET N-CH TO263-3 Infineon Technologies |
3,102 | - |
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- | - | Tape & Reel (TR) | Obsolete | - | - | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI80N07S405AKSA1MOSFET N-CH TO262-3 Infineon Technologies |
3,319 | - |
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- | - | Tube | Obsolete | - | - | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |