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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF7342PBF

    IRF7342PBF

    MOSFET 2P-CH 55V 3.4A 8SO

    Infineon Technologies

    2,796
    RFQ
    IRF7342PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 55V 3.4A 105mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7380PBF

    IRF7380PBF

    MOSFET 2N-CH 80V 3.6A 8SO

    Infineon Technologies

    2,027
    RFQ
    IRF7380PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V 3.6A 73mOhm @ 2.2A, 10V 4V @ 250µA 23nC @ 10V 660pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9956PBF

    IRF9956PBF

    MOSFET 2N-CH 30V 3.5A 8SO

    Infineon Technologies

    2,751
    RFQ
    IRF9956PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7328PBF

    IRF7328PBF

    MOSFET 2P-CH 30V 8A 8SO

    Infineon Technologies

    2,673
    RFQ
    IRF7328PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7311PBF

    IRF7311PBF

    MOSFET 2N-CH 20V 6.6A 8SO

    Infineon Technologies

    3,110
    RFQ
    IRF7311PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29mOhm @ 6A, 4.5V 700mV @ 250µA 27nC @ 4.5V 900pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7317PBF

    IRF7317PBF

    MOSFET N/P-CH 20V 6.6A/5.3A 8SO

    Infineon Technologies

    2,534
    RFQ
    IRF7317PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 6.6A, 5.3A 29mOhm @ 6A, 4.5V 700mV @ 250µA 27nC @ 4.5V 900pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7910PBF

    IRF7910PBF

    MOSFET 2N-CH 12V 10A 8SO

    Infineon Technologies

    4,341
    RFQ
    IRF7910PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 12V 10A 15mOhm @ 8A, 4.5V 2V @ 250µA 26nC @ 4.5V 1730pF @ 6V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7338PBF

    IRF7338PBF

    MOSFET N/P-CH 12V 6.3A/3A 8SO

    Infineon Technologies

    3,101
    RFQ
    IRF7338PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 12V 6.3A, 3A 34mOhm @ 6A, 4.5V 1.5V @ 250µA 8.6nC @ 4.5V 640pF @ 9V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7329PBF

    IRF7329PBF

    MOSFET 2P-CH 12V 9.2A 8SO

    Infineon Technologies

    3,481
    RFQ
    IRF7329PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 9.2A 17mOhm @ 9.2A, 4.5V 900mV @ 250µA 57nC @ 4.5V 3450pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7350PBF

    IRF7350PBF

    MOSFET N/P-CH 100V 2.1A/1.5A 8SO

    Infineon Technologies

    3,101
    RFQ
    IRF7350PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel - 100V 2.1A, 1.5A 210mOhm @ 2.1A, 10V 4V @ 250µA 28nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    Total 496 Record«Prev1... 3132333435363738...50Next»
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