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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF8910PBF

    IRF8910PBF

    MOSFET 2N-CH 20V 10A 8SO

    Infineon Technologies

    4,488
    RFQ
    IRF8910PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 10A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9910PBF

    IRF9910PBF

    MOSFET 2N-CH 20V 10A/12A 8SO

    Infineon Technologies

    2,358
    RFQ
    IRF9910PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 10A, 12A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 900pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7902PBF

    IRF7902PBF

    MOSFET 2N-CH 30V 6.4A/9.7A 8SO

    Infineon Technologies

    3,622
    RFQ
    IRF7902PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.4A, 9.7A 22.6mOhm @ 6.4A, 10V 2.25V @ 25µA 6.9nC @ 4.5V 580pF @ 15V 1.4W, 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7904PBF

    IRF7904PBF

    MOSFET 2N-CH 30V 7.6A/11A 8SO

    Infineon Technologies

    3,058
    RFQ
    IRF7904PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7.6A, 11A 16.2mOhm @ 7.6A, 10V 2.25V @ 25µA 11nC @ 4.5V 910pF @ 15V 1.4W, 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7905PBF

    IRF7905PBF

    MOSFET 2N-CH 30V 7.8A/8.9A 8SO

    Infineon Technologies

    2,424
    RFQ
    IRF7905PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 7.8A, 8.9A 21.8mOhm @ 7.8A, 10V 2.25V @ 25µA 6.9nC @ 4.5V 600pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7907PBF

    IRF7907PBF

    MOSFET 2N-CH 30V 9.1A/11A 8SO

    Infineon Technologies

    3,949
    RFQ
    IRF7907PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9.1A, 11A 16.4mOhm @ 9.1A, 10V 2.35V @ 25µA 10nC @ 4.5V 850pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7507PBF

    IRF7507PBF

    MOSFET N/P-CH 20V 2.4A MICRO8

    Infineon Technologies

    2,542
    RFQ
    IRF7507PBF

    Tabla de datos

    HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 2.4A, 1.7A 140mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8nC @ 4.5V 260pF @ 15V 1.25W - - - Surface Mount Micro8™
    IRF7379QTRPBF

    IRF7379QTRPBF

    MOSFET N/P-CH 30V 5.8A/4.3A 8SO

    Infineon Technologies

    3,381
    RFQ
    IRF7379QTRPBF

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 5.8A, 4.3A 45mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V 2.5W - - - Surface Mount 8-SO
    IRF7309QTRPBF

    IRF7309QTRPBF

    MOSFET N/P-CH 30V 4A/3A 8SO

    Infineon Technologies

    4,834
    RFQ
    IRF7309QTRPBF

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 4A, 3A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 4.5V 520pF @ 15V 1.4W - - - Surface Mount 8-SO
    IRF7306QTRPBF

    IRF7306QTRPBF

    MOSFET 2P-CH 30V 3.6A 8SO

    Infineon Technologies

    3,026
    RFQ
    IRF7306QTRPBF

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 2W - - - Surface Mount 8-SO
    Total 496 Record«Prev1... 3435363738394041...50Next»
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