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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    BSO207PNTMA1

    BSO207PNTMA1

    MOSFET 2P-CH 20V 5.7A 8DSO

    Infineon Technologies

    4,891
    RFQ
    BSO207PNTMA1

    Tabla de datos

    OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 5.7A 45mOhm @ 5.7A, 4.5V 1.2V @ 40µA 23.4nC @ 4.5V 1013pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    BSO204PNTMA1

    BSO204PNTMA1

    MOSFET 2P-CH 20V 7A 8DSO

    Infineon Technologies

    4,981
    RFQ
    BSO204PNTMA1

    Tabla de datos

    OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 7A 30mOhm @ 7A, 4.5V 1.2V @ 60µA 35.8nC @ 4.5V 1513pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
    IRF7314PBF

    IRF7314PBF

    MOSFET 2P-CH 20V 5.3A 8SO

    Infineon Technologies

    3,285
    RFQ
    IRF7314PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 5.3A 58mOhm @ 2.9A, 4.5V 700mV @ 250µA 29nC @ 4.5V 780pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7319PBF

    IRF7319PBF

    MOSFET N/P-CH 30V 8SO

    Infineon Technologies

    4,413
    RFQ
    IRF7319PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel - 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7303PBF

    IRF7303PBF

    MOSFET 2N-CH 30V 4.9A 8SO

    Infineon Technologies

    4,208
    RFQ
    IRF7303PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4.9A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7389PBF

    IRF7389PBF

    MOSFET N/P-CH 30V 8SO

    Infineon Technologies

    2,803
    RFQ
    IRF7389PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7105PBF

    IRF7105PBF

    MOSFET N/P-CH 25V 3.5A/2.3A 8SO

    Infineon Technologies

    2,393
    RFQ
    IRF7105PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel - 25V 3.5A, 2.3A 100mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V 330pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7304PBF

    IRF7304PBF

    MOSFET 2P-CH 20V 4.3A 8SO

    Infineon Technologies

    4,556
    RFQ
    IRF7304PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.3A 90mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V 610pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7103PBF

    IRF7103PBF

    MOSFET 2N-CH 50V 3A 8SO

    Infineon Technologies

    4,597
    RFQ
    IRF7103PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 3A 130mOhm @ 3A, 10V 3V @ 250µA 30nC @ 10V 290pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9952PBF

    IRF9952PBF

    MOSFET N/P-CH 30V 3.5A/2.3A 8SO

    Infineon Technologies

    4,317
    RFQ
    IRF9952PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 3.5A, 2.3A 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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