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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA60R950C6XKSA1MOSFET N-CH 600V 4.4A TO220-FP Infineon Technologies |
1 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
SPB03N60S5ATMA1MOSFET N-CH 600V 3.2A TO263-3 Infineon Technologies |
3,403 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRF3704LMOSFET N-CH 20V 77A TO262 Infineon Technologies |
4,734 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1996 pF @ 10 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IPP054NE8NGHKSA2MOSFET N-CH 85V 100A TO220-3 Infineon Technologies |
3,714 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 100A (Tc) | 10V | 5.4mOhm @ 100A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 12100 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRL3705ZMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
4,615 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFR3103MOSFET N-CH 400V 1.7A DPAK Infineon Technologies |
2,268 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSC025N03LSGATMA1MOSFET N-CH 30V 25A/100A TDSON Infineon Technologies |
3,853 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 30A, 10V | 2.2V @ 250µA | 74 nC @ 10 V | ±20V | 6100 pF @ 15 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
|
|
IPD60R520CPBTMA1MOSFET N-CH 600V 6.8A TO252-3 Infineon Technologies |
3,127 |
|
Tabla de datos |
CoolMOS™ CP | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31 nC @ 10 V | ±20V | 630 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IRFS4710PBFMOSFET N-CH 100V 75A D2PAK Infineon Technologies |
4,118 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170 nC @ 10 V | ±20V | 6160 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF9530NLMOSFET P-CH 100V 14A TO262 Infineon Technologies |
3,218 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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