制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRLB3034PBFXKMA1TRENCH <= 40V Infineon Technologies |
2,068 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFH5215TRPBFMOSFET N-CH 150V 5A/27A PQFN Infineon Technologies |
4,650 | - |
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HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Ta), 27A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±20V | 1350 pF @ 50 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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IRFSL3307MOSFET N-CH 75V 130A TO262 Infineon Technologies |
4,554 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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BTS282Z E3180AMOSFET N-CH 49V 80A TO220-7 Infineon Technologies |
2,548 | - |
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TEMPFET® | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO220-7-180 |
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BUZ80AMOSFET N-CH 800V 3.6A TO220AB Infineon Technologies |
2,048 | - |
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SIPMOS® | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 3Ohm @ 2A, 10V | 4V @ 1mA | - | ±20V | 1350 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL3705NSMOSFET N-CH 55V 89A D2PAK Infineon Technologies |
3,846 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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94-2386MOSFET N-CH 55V 49A D2PAK Infineon Technologies |
3,642 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFZ44NLMOSFET N-CH 55V 49A TO262 Infineon Technologies |
2,901 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRLZ44NLMOSFET N-CH 55V 47A TO262 Infineon Technologies |
4,579 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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SPD04N50C3TMOSFET N-CH 560V 4.5A DPAK Infineon Technologies |
3,189 | - |
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* | - | Cut Tape (CT) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |