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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF1503LPBFMOSFET N-CH 30V 75A TO262 Infineon Technologies |
3,754 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 10V | 3.3mOhm @ 140A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 5730 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF7807VD1TRMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
3,524 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRL3705ZSMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
4,956 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | ±16V | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRFS7787TRLPBFMOSFET N-CH 75V 76A D2PAK Infineon Technologies |
4,495 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
SPP20N60CFDXKSA1MOSFET N-CH 650V 20.7A TO220-3 Infineon Technologies |
2,684 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SPW11N60S5FKSA1MOSFET N-CH 600V 11A TO247-3 Infineon Technologies |
4,807 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
|
SI4420DYTRMOSFET N-CH 30V 12.5A 8SO Infineon Technologies |
2,480 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78 nC @ 10 V | ±20V | 2240 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRLU3705ZMOSFET N-CH 55V 42A I-PAK Infineon Technologies |
4,317 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | ±16V | 2900 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
GS-065-011-6-L-TRGS-065-011-6-L-TR Infineon Technologies Canada Inc. |
3,578 |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 12.2A (Tc) | 6V | 180mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
IPB180N04S4L01ATMA1MOSFET N-CH 40V 180A TO263-7 Infineon Technologies |
4,166 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 100A, 10V | 2.2V @ 140µA | 245 nC @ 10 V | +20V, -16V | 19100 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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