制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IAUT165N08S5N029ATMA1MOSFET N-CH 80V 165A 8HSOF Infineon Technologies |
3,528 | - |
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OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90 nC @ 10 V | ±20V | 6370 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IRF8113MOSFET N-CH 30V 17.2A 8SO Infineon Technologies |
2,551 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRLHM620TR2PBFMOSFET N-CH 20V 26A PQFN Infineon Technologies |
3,832 | - |
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- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 26A (Ta), 40A (Tc) | - | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78 nC @ 4.5 V | - | 3620 pF @ 10 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
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IRFS23N15DMOSFET N-CH 150V 23A D2PAK Infineon Technologies |
4,591 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR2307ZMOSFET N-CH 75V 42A DPAK Infineon Technologies |
4,565 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75 nC @ 10 V | ±20V | 2190 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7484QMOSFET N-CH 40V 14A 8SO Infineon Technologies |
3,623 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100 nC @ 7 V | ±8V | 3520 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRFHM830DTR2PBFMOSFET N-CH 30V 20A PQFN Infineon Technologies |
2,478 | - |
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- | 8-VQFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 40A (Tc) | - | 4.3mOhm @ 20A, 10V | 2.35V @ 50µA | 27 nC @ 10 V | - | 1797 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
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IRF7702MOSFET P-CH 12V 8A 8TSSOP Infineon Technologies |
2,575 | - |
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HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81 nC @ 4.5 V | ±8V | 3470 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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AUIRFS6535TRLMOSFET N-CH 300V 19A D2PAK Infineon Technologies |
3,684 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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SPP100N04S2-04MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
2,372 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 7220 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |