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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9540NSTRRMOSFET P-CH 100V 23A D2PAK Infineon Technologies |
4,045 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRL1404ZSTRLMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
2,986 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFH5406TR2PBFMOSFET N-CH 60V 40A 5X6 PQFN Infineon Technologies |
3,797 |
|
Tabla de datos |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 40A (Tc) | - | 14.4mOhm @ 24A, 10V | 4V @ 50µA | 35 nC @ 10 V | - | 1256 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
|
AUIRFR9024NTRLMOSFET P-CH 55V 11A DPAK Infineon Technologies |
2,024 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPP023N08N5XKSA1TRENCH 40<-<100V Infineon Technologies |
2,598 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 208µA | 166 nC @ 10 V | ±20V | 12100 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRF7811MOSFET N-CH 28V 14A 8SO Infineon Technologies |
2,785 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 14A (Ta) | 4.5V | 11mOhm @ 15A, 4.5V | 1V @ 250µA | 23 nC @ 5 V | ±12V | 1800 pF @ 16 V | - | 3.5W (Ta) | - | - | - | Surface Mount | 8-SO |
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IPTG025N10NM5ATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
4,317 |
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Tabla de datos |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 206A (Tc) | 6V, 10V | 2.5mOhm @ 150A 10V | 3.8V @ 158µA | 120 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IRFIZ46NMOSFET N-CH 55V 33A TO220AB FP Infineon Technologies |
4,179 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 10V | 20mOhm @ 19A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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SPP100N06S2L-05MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
2,126 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 7530 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPD18P06PMOSFET P-CH 60V 18.6A TO252-3 Infineon Technologies |
4,882 |
|
Tabla de datos |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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