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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD5N03LAGMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
4,050 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | 2V @ 35µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IRFH7932TR2PBFMOSFET N-CH 30V 24A PQFN56 Infineon Technologies |
2,847 |
|
Tabla de datos |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 104A (Tc) | - | 3.3mOhm @ 25A, 10V | 2.35V @ 100µA | 51 nC @ 4.5 V | - | 4270 pF @ 15 V | - | 3.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
|
IPI06CN10N GMOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
4,435 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 139 nC @ 10 V | ±20V | 9200 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPI60R165CPAKSA1MOSFET N-CH 650V 21A TO262-3 Infineon Technologies |
4,527 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IRL2505STRLMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
4,876 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL2505STRRMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
2,800 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL2910STRLMOSFET N-CH 100V 55A D2PAK Infineon Technologies |
3,375 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRL1004STRLMOSFET N-CH 40V 130A D2PAK Infineon Technologies |
3,190 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100 nC @ 4.5 V | ±16V | 5330 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF5305LMOSFET P-CH 55V 31A TO262 Infineon Technologies |
3,545 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF2204LPBFMOSFET N-CH 40V 170A TO262 Infineon Technologies |
3,477 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 170A (Tc) | 10V | 3.6mOhm @ 130A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 5890 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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