制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSB014N04LX3GXUMA1MOSFET N-CH 40V 36A/180A 2WDSON Infineon Technologies |
3,210 | - |
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OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 36A (Ta), 180A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 196 nC @ 10 V | ±20V | 16900 pF @ 20 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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BSP149H6906XTSA1MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies |
4,479 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 200 V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14 nC @ 5 V | ±20V | 430 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT223-4 |
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IRFH5302TR2PBFMOSFET N-CH 30V 32A 5X6 PQFN Infineon Technologies |
3,915 | - |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 100A (Tc) | - | 2.1mOhm @ 50A, 10V | 2.35V @ 100µA | 76 nC @ 10 V | - | 4400 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
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IRF7832ZMOSFET N-CH 30V 21A 8SO Infineon Technologies |
4,484 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.35V @ 250µA | 45 nC @ 4.5 V | ±20V | 3860 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF1010ESTRRMOSFET N-CH 60V 84A D2PAK Infineon Technologies |
3,483 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF6711STR1PBFMOSFET N-CH 25V 19A DIRECTFET Infineon Technologies |
4,265 | - |
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HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 84A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.35V @ 25µA | 20 nC @ 4.5 V | ±20V | 1810 pF @ 13 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
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IRFH7440TR2PBFMOSFET N-CH 40V 85A 8PQFN Infineon Technologies |
4,869 | - |
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- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 85A (Tc) | - | 2.4mOhm @ 50A, 10V | 3.9V @ 100µA | 138 nC @ 10 V | - | 4574 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH4210TRPBFMOSFET N-CH 25V 45A PQFN Infineon Technologies |
4,245 | - |
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HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 45A (Ta) | 4.5V, 10V | 1.35mOhm @ 50A, 10V | 2.1V @ 100µA | 74 nC @ 10 V | ±20V | 4812 pF @ 13 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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ISZ0804NLSATMA1MOSFET N-CH 100V 11A/58A TSDSON Infineon Technologies |
2,363 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 58A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2.3V @ 28µA | 24 nC @ 10 V | ±20V | 1600 pF @ 50 V | - | 2.1W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-26 |
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ISC007N06LM6ATMA1TRENCH 40<-<100V Infineon Technologies |
3,910 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |