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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP92P E6327MOSFET P-CH 250V 260MA SOT223-4 Infineon Technologies |
4,224 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 260mA (Ta) | 2.8V, 10V | 12Ohm @ 260mA, 10V | 2V @ 130µA | 5.4 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
SN7002W E6327MOSFET N-CH 60V 230MA SOT323-3 Infineon Technologies |
3,542 |
|
Tabla de datos |
SIPMOS® | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT323 |
|
IPD135N03LGBTMA1LV POWER MOS Infineon Technologies |
4,760 |
|
Tabla de datos |
OptiMOS™ 3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRF1902TRPBFMOSFET N-CH 20V 4.2A 8SO Infineon Technologies |
4,985 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.7V, 4.5V | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5 nC @ 4.5 V | ±12V | 310 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPC022N03L3X1SA1MOSFET N-CH 30V 1A SAWN ON FOIL Infineon Technologies |
2,781 |
|
Tabla de datos |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 1A (Tj) | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
|
BSC0996NSATMA1MOSFET N-CH 34V 13A TDSON-8-5 Infineon Technologies |
4,377 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 34 V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 8A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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IPU105N03L GMOSFET N-CH 30V 35A TO251-3 Infineon Technologies |
2,731 |
|
Tabla de datos |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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BSS87 E6433MOSFET N-CH 240V 260MA SOT89 Infineon Technologies |
2,477 |
|
Tabla de datos |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 240 V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5 nC @ 10 V | ±20V | 97 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
|
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IPU090N03L GMOSFET N-CH 30V 40A TO251-3 Infineon Technologies |
3,545 |
|
Tabla de datos |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
|
BSP315P-E6327MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies |
3,061 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | ±20V | 160 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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