制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSS159NL6327HTSA1MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
4,135 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9 nC @ 5 V | ±20V | 44 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS139L6327HTSA1MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
3,612 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 250 V | 100mA (Ta) | 0V, 10V | 14Ohm @ 0.1mA, 10V | 1V @ 56µA | 3.5 nC @ 5 V | ±20V | 76 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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IRF9393TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
4,324 | - |
|
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- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.2A (Ta) | 4.5V, 20V | 13.3mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38 nC @ 10 V | ±25V | 1110 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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BSS139 E6327MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
2,597 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 250 V | 100mA (Ta) | 0V, 10V | 14Ohm @ 0.1mA, 10V | 1V @ 56µA | 3.5 nC @ 5 V | ±20V | 76 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS87H6327XTSA1MOSFET N-CH 240V 260MA SOT89-4 Infineon Technologies |
4,654 | - |
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SIPMOS™ | TO-243AA | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 240 V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5 nC @ 10 V | ±20V | 97 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89-4-2 |
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BSL211SPMOSFET P-CH 20V 4.7A TSOP-6 Infineon Technologies |
4,103 | - |
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OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | ±12V | 654 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BSL211SPTMOSFET P-CH 20V 4.7A TSOP-6 Infineon Technologies |
2,553 | - |
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OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | ±12V | 654 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BSS169L6327HTSA1MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies |
2,368 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8 nC @ 7 V | ±20V | 68 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSS169 E6327MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies |
2,924 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8 nC @ 7 V | ±20V | 68 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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BSZ105N04NSGATMA2TRENCH <= 40V Infineon Technologies |
3,267 | - |
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- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta), 40A (Tc) | 10V | 10.5mOhm @ 20A, 10V | 4V @ 14µA | 17 nC @ 10 V | ±20V | 1300 pF @ 20 V | - | 2.1W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-1 |