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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD075N03LGBTMA1MOSFET N-CH 30V 50A TO252-31 Infineon Technologies |
2,204 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18 nC @ 10 V | ±20V | 1900 pF @ 15 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IRF7201TRPBFXTMA1PLANAR <=40V Infineon Technologies |
2,740 |
|
- |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-902 |
|
|
IRF7465TRPBFXTMA1PLANAR 40<-<100V Infineon Technologies |
3,314 |
|
- |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1.9A (Ta) | 10V | 280mOhm @ 1.14A, 10V | 5.5V @ 250µA | 15 nC @ 10 V | ±30V | 330 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
BSP170PE6327TMOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
2,844 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
|
SPD08P06PMOSFET P-CH 60V 8.83A TO252-3 Infineon Technologies |
2,413 |
|
Tabla de datos |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.83A (Ta) | - | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13 nC @ 10 V | - | 420 pF @ 25 V | - | 42W (Tc) | - | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD06P005LSAUMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
2,431 |
|
- |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
|
IPD060N03LGBTMA1MOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
3,401 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD65R1K0CEAUMA1MOSFET N-CH 650V 7.2A TO252-3 Infineon Technologies |
3,599 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
BSS87E6327TMOSFET N-CH 240V 260MA SOT89-4 Infineon Technologies |
4,498 |
|
Tabla de datos |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240 V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5 nC @ 10 V | ±20V | 97 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89-4-2 |
|
IPU60R1K0CEAKMA2MOSFET N-CH 600V 4.3A TO251-3 Infineon Technologies |
4,035 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 61W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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