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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD06P005NSAUMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
3,153 |
|
- |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
BSS192PE6327TMOSFET P-CH 250V 190MA SOT89 Infineon Technologies |
3,961 |
|
Tabla de datos |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
|
|
SPD09P06PLMOSFET P-CH 60V 9.7A TO252-3 Infineon Technologies |
3,943 |
|
Tabla de datos |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.7A (Tc) | 4.5V, 10V | 250mOhm @ 6.8A, 10V | 2V @ 250µA | 21 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
BSS138NL6327HTSA1MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
3,072 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | 1.4V @ 250µA | 1.4 nC @ 10 V | ±20V | 41 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
|
|
SN7002N L6327MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
4,532 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
|
BSP320SH6433XTMA1MOSFET N-CH 60V 2.9A SOT223 Infineon Technologies |
4,239 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.9A (Tj) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3 nC @ 7 V | ±20V | 340 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IRF7526D1PBFMOSFET P-CH 30V 2A MICRO8 Infineon Technologies |
2,142 |
|
Tabla de datos |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
|
BSS192PE6327MOSFET P-CH 250V 190MA SOT89 Infineon Technologies |
3,997 |
|
Tabla de datos |
SIPMOS® | TO-243AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1 nC @ 10 V | ±20V | 104 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT89 |
|
BSP316PE6327MOSFET P-CH 100V 680MA SOT223-4 Infineon Technologies |
4,236 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | ±20V | 146 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
IPU060N03L GMOSFET N-CH 30V 50A TO251-3 Infineon Technologies |
3,936 |
|
Tabla de datos |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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