制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPS60R3K4CEAKMA1CONSUMER Infineon Technologies |
4,773 | - |
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CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.6A (Tj) | 10V | 3.4Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 93 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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BSP123E6327TMOSFET N-CH 100V 370MA SOT223-4 Infineon Technologies |
4,233 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 370mA (Ta) | 2.8V, 10V | 6Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4 nC @ 10 V | ±20V | 70 pF @ 25 V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSL307SPTMOSFET P-CH 30V 5.5A TSOP-6 Infineon Technologies |
3,078 | - |
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OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | ±20V | 805 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BSL207SPMOSFET P-CH 20V 6A TSOP-6 Infineon Technologies |
4,196 | - |
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OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 2.5V, 4.5V | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20 nC @ 4.5 V | ±12V | 1007 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BSL307SPMOSFET P-CH 30V 5.5A TSOP-6 Infineon Technologies |
2,889 | - |
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OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | ±20V | 805 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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IPN70R2K1CEATMA1MOSFET N-CHANNEL 700V 4A SOT223 Infineon Technologies |
2,695 | - |
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- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 2.1Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8 nC @ 10 V | ±20V | 163 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-3 |
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IRF7523D1TRPBFMOSFET N-CH 30V 2.7A MICRO8 Infineon Technologies |
3,273 | - |
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FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 1V @ 250µA | 12 nC @ 10 V | ±20V | 210 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
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IPD135N03LGXTMOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
2,243 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 31W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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BSS169L6906HTSA1MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies |
2,238 | - |
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SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8 nC @ 7 V | ±20V | 68 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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IRF7603TRPBFMOSFET N-CH 30V 5.6A MICRO8 Infineon Technologies |
2,296 | - |
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HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | 4.5V, 10V | 35mOhm @ 3.7A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 520 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |