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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP320S E6433MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies |
3,799 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
BSS126L6906HTSA1MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies |
3,439 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 600 V | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | 2.7V @ 8µA | 2.1 nC @ 5 V | ±20V | 28 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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IPSA70R2K0P7SAKMA1MOSFET N-CH 700V 3A TO251-3 Infineon Technologies |
3,571 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 3A (Tc) | 10V | 2Ohm @ 500mA, 10V | 3.5V @ 30µA | 3.8 nC @ 400 V | ±16V | 130 pF @ 400 V | - | 17.6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-347 |
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IPC028N03L3X1SA1MOSFET N-CH 30V 2A SAWN ON FOIL Infineon Technologies |
4,220 |
|
Tabla de datos |
OptiMOS™ 3 | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | - | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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BSS159NL6906HTSA1MOSFET N-CH 60V 230MA SOT23-3 Infineon Technologies |
2,243 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9 nC @ 5 V | ±20V | 44 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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IPD090N03LGBTMA1MOSFET N-CH 30V 40A TO252-3 Infineon Technologies |
3,268 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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BSS139L6906HTSA1MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
3,745 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 250 V | 100mA (Ta) | 0V, 10V | 14Ohm @ 0.1mA, 10V | 1V @ 56µA | 3.5 nC @ 5 V | ±20V | 76 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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IRF7524D1PBFMOSFET P-CH 20V 1.7A MICRO8 Infineon Technologies |
3,890 |
|
Tabla de datos |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA (Min) | 8.2 nC @ 4.5 V | ±12V | 240 pF @ 15 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
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IPD15N06S2L64ATMA1MOSFET N-CH 55V 19A TO252-3 Infineon Technologies |
3,062 |
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Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 4.5V, 10V | 64mOhm @ 13A, 10V | 2V @ 14µA | 13 nC @ 10 V | ±20V | 354 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPS60R1K5CEAKMA1CONSUMER Infineon Technologies |
4,485 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 49W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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