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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC079N10NSGATMA1MOSFET N-CH 100V 13.4A 8TDSON Infineon Technologies |
4,701 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.4A (Ta), 100A (Tc) | 10V | 7.9mOhm @ 50A, 10V | 4V @ 110µA | 87 nC @ 10 V | ±20V | 5900 pF @ 50 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
IPA320N20NM3SXKSA1MOSFET N-CH 200V 26A TO220 Infineon Technologies |
2,238 |
|
Tabla de datos |
OptiMOS™ 3 | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 32mOhm @ 26A, 10V | 4V @ 89µA | 30 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
IPB049NE7N3GATMA1MOSFET N-CH 75V 80A D2PAK Infineon Technologies |
1,895 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 4.9mOhm @ 80A, 10V | 3.8V @ 91µA | 68 nC @ 10 V | ±20V | 4750 pF @ 37.5 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
BSB165N15NZ3GXUMA1MOSFET N-CH 150V 9A/45A 2WDSON Infineon Technologies |
3,331 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | ±20V | 2800 pF @ 75 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
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IPL60R225CFD7AUMA1MOSFET N-CH 600V 12A VSON-4 Infineon Technologies |
3,000 |
|
Tabla de datos |
CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 225mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 68W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4-1 |
|
|
IPB067N08N3GATMA1MOSFET N-CH 80V 80A D2PAK Infineon Technologies |
5,270 |
|
Tabla de datos |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 6.7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPB020N04NGATMA1MOSFET N-CH 40V 140A TO263-7 Infineon Technologies |
2,092 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 140A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 95µA | 120 nC @ 10 V | ±20V | 9700 pF @ 20 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
AUIRFR5305TRMOSFET P-CH 55V 31A DPAK Infineon Technologies |
1,519 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | - | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | - | 1200 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
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BSB056N10NN3GXUMA1MOSFET N-CH 100V 9A/83A 2WDSON Infineon Technologies |
319 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 83A (Tc) | 6V, 10V | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74 nC @ 10 V | ±20V | 5500 pF @ 50 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
|
IPB60R170CFD7ATMA1MOSFET N-CH 600V 14A TO263-3-2 Infineon Technologies |
1,000 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1190 pF @ 400 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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