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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF3305MOSFET N-CH 55V 140A TO220 Infineon Technologies |
3,029 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 140A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3650 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
IPD90N04S304ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
2,666 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 90µA | 80 nC @ 10 V | ±20V | 5200 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPD60R210CFD7ATMA1MOSFET N CH Infineon Technologies |
2,964 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 64W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRFP4137PBFMOSFET N-CH 300V 38A TO247AC Infineon Technologies |
3,397 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±20V | 5168 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
BUZ323N-CHANNEL POWER MOSFET Infineon Technologies |
6,000 |
|
Tabla de datos |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BTS244ZE3043AKSA2MOSFET N-CH 55V 35A TO220-5-12 Infineon Technologies |
2,330 |
|
Tabla de datos |
TEMPFET® | TO-220-5 | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-5-12 |
|
IRF6795MTRPBFMOSFET N-CH 25V 32A DIRECTFET Infineon Technologies |
887 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 100µA | 53 nC @ 4.5 V | ±20V | 4280 pF @ 13 V | - | 2.8W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
IPL60R385CPAUMA1MOSFET N-CH 600V 9A 4VSON Infineon Technologies |
2,452 |
|
Tabla de datos |
CoolMOS™ CP | 4-PowerTSFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 17 nC @ 10 V | ±20V | 790 pF @ 100 V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
ISC0806NLSATMA1MOSFET N-CH 100V 16A/97A TDSON Infineon Technologies |
4,640 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Ta), 97A (Tc) | 4.5V, 10V | 5.4mOhm @ 50A, 10V | 2.3V @ 61µA | 49 nC @ 10 V | ±20V | 3400 pF @ 50 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
|
IRF2807ZSTRLPBFMOSFET N-CH 75V 75A D2PAK Infineon Technologies |
568 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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