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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC0402NSATMA1MOSFET N-CH 150V 80A TDSON-8 Infineon Technologies |
4,848 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 150 V | 80A (Tc) | 8V, 10V | 9.3mOhm @ 40A, 10 | 4.6V @ 107µA | 33 nC @ 10 V | ±20V | 2400 pF @ 75 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
|
AUIRFR8405TRLMOSFET N-CH 40V 100A DPAK Infineon Technologies |
2,955 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155 nC @ 10 V | ±20V | 5171 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
AUIRFR5305TRLMOSFET P-CH 55V 31A DPAK Infineon Technologies |
244 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3 |
|
IPP70N10S3L12AKSA1MOSFET N-CH 100V 70A TO220-3 Infineon Technologies |
131 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 80 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPA040N08NM5SXKSA1TRENCH 40<-<100V PG-TO220-3 Infineon Technologies |
490 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 6V, 10V | 4mOhm @ 38A, 10V | 3.8V @ 109µA | 93 nC @ 10 V | ±20V | 6400 pF @ 40 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPB120N06S402ATMA2MOSFET N-CH 60V 120A TO263-3 Infineon Technologies |
1,206 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 140µA | 195 nC @ 10 V | ±20V | 15750 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IPL60R299CPAUMA1MOSFET N-CH 600V 11.1A 4VSON Infineon Technologies |
2,867 |
|
Tabla de datos |
CoolMOS™ CP | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.1A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
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AUIRFR5410TRLMOSFET P-CH 100V 13A DPAK Infineon Technologies |
1,874 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3 |
|
IRFP4127PBFMOSFET N-CH 200V 75A TO247AC Infineon Technologies |
604 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 75A (Tc) | 10V | 21mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPT65R195G7XTMA1MOSFET N-CH 650V 14A 8HSOF Infineon Technologies |
2,012 |
|
Tabla de datos |
CoolMOS™ C7 | 8-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 195mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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