制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPB160N04S3H2ATMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
2,464 | - |
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OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.1mOhm @ 80A, 10V | 4V @ 150µA | 145 nC @ 10 V | ±20V | 9600 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPB100N06S205ATMA4MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
4,285 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRF540NLMOSFET N-CH 100V 33A TO262 Infineon Technologies |
217 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 1960 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPB80P04P4L04ATMA2MOSFET P-CH 40V 80A TO263-3 Infineon Technologies |
644 | - |
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OptiMOS™ P2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | +5V, -16V | 11570 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA60R145CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
500 | - |
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- | - | Tube | Last Time Buy | - | - | - | 9A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF3610STRLPBFMOSFET N-CH 100V 103A D2PAK Infineon Technologies |
184 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 103A (Tc) | - | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150 nC @ 10 V | - | 5380 pF @ 25 V | - | - | - | - | - | Surface Mount | PG-TO263-3 |
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BTS282ZE3230AKSA2MOSFET N-CH 49V 80A TO220-7 Infineon Technologies |
3,029 | - |
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TEMPFET® | TO-220-7 | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-7-12 |
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BSC0802LSATMA1MOSFET N-CH 100V 20A/100A TDSON Infineon Technologies |
4,408 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 50A, 10V | 2.3V @ 115µA | 46 nC @ 4.5 V | ±20V | 6500 pF @ 50 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
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IPB180P04P4L02ATMA1MOSFET P-CH 40V 180A TO263-7 Infineon Technologies |
139 | - |
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OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | 2.2V @ 410µA | 286 nC @ 10 V | ±16V | 18700 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPB100N04S204ATMA4MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
3,000 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |