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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPA028N04NM3SXKSA1TRENCH <= 40V PG-TO220-3 Infineon Technologies |
500 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 89A (Tc) | 10V | 2.8mOhm @ 89A, 10V | 4V @ 95µA | 120 nC @ 10 V | ±20V | 9500 pF @ 20 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPP052NE7N3GXKSA1MOSFET N-CH 75V 80A TO220-3 Infineon Technologies |
4,378 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 3.8V @ 91µA | 68 nC @ 10 V | ±20V | 4750 pF @ 37.5 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPD70N10S3L12ATMA1MOSFET N-CH 100V 70A TO252-3 Infineon Technologies |
4,047 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPB60R280CFD7ATMA1MOSFET N-CH 600V 9A TO263-3-2 Infineon Technologies |
960 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPI80N08S406AKSA1MOSFET N-CH 80V 80A TO262-3 Infineon Technologies |
4,607 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
|
|
IPB65R225C7ATMA2MOSFET N-CH 650V 11A TO263-3 Infineon Technologies |
858 |
|
Tabla de datos |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
AUIRLR3410TRLMOSFET N-CH 100V 17A DPAK Infineon Technologies |
33 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3 |
|
IPI120N04S302AKSA1MOSFET N-CH 40V 120A TO262-3 Infineon Technologies |
4,406 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
BTS114AE3045AN-CHANNEL POWER MOSFET Infineon Technologies |
10,937 |
|
Tabla de datos |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 17A (Tc) | 10V | 100mOhm @ 9A, 10V | 3.5V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 50W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO220-3-5 |
|
BTS114A E3045AN-CHANNEL POWER MOSFET Infineon Technologies |
4,000 |
|
Tabla de datos |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 17A (Tc) | 10V | 100mOhm @ 9A, 10V | 3.5V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 50W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO220-3-5 |
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