Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFSL3107PBFMOSFET N-CH 75V 195A TO262 Infineon Technologies |
2,884 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9370 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF6726MTRPBFMOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
4,001 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IPP120N10S403AKSA1MOSFET N-CH 100V 120A TO220-3 Infineon Technologies |
3,351 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
|
|
IPP80R450P7XKSA1MOSFET N-CH 800V 11A TO220-3 Infineon Technologies |
5,467 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24 nC @ 10 V | ±20V | 770 pF @ 500 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
AUIRF7732S2TRMOSFET N-CH 40V 14A DIRECTFET SC Infineon Technologies |
1,270 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric SC | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 10V | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET™ SC |
|
IPA083N10NM5SXKSA1MOSFET N-CH 100V 50A TO220 Infineon Technologies |
353 |
|
Tabla de datos |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 6V, 10V | 8.3mOhm @ 25A, 10V | 3.8V @ 49µA | 40 nC @ 10 V | ±20V | 2700 pF @ 50 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
IPB240N03S4LR9ATMA1MOSFET N-CH 30V 240A TO263-7 Infineon Technologies |
2,752 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 240A (Tc) | 4.5V, 10V | 0.92mOhm @ 100A, 10V | 2.2V @ 180µA | 300 nC @ 10 V | ±16V | 20300 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
|
BSC0302LSATMA1MOSFET N-CH 120V 12A/99A TDSON Infineon Technologies |
5,017 |
|
Tabla de datos |
OptiMOS™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 120 V | 12A (Ta), 99A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | 2.4V @ 112µA | 79 nC @ 10 V | ±20V | 7400 pF @ 60 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
|
BTS244ZE3062AATMA1N-CHANNEL POWER MOSFET Infineon Technologies |
31,454 |
|
Tabla de datos |
* | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | - | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-5-2 |
|
IRFS4510TRLPBFMOSFET N-CH 100V 61A D2PAK Infineon Technologies |
4,000 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 61A (Tc) | 10V | 13.9mOhm @ 37A, 10V | 4V @ 100µA | 87 nC @ 10 V | ±20V | 3180 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
