制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPD12CN10NGATMA1MOSFET N-CH 100V 67A TO252-3 Infineon Technologies |
7,117 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4320 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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SPB160N04S2-03160A, 40V N-CHANNEL, MOSFET Infineon Technologies |
252 | - |
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OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 7320 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPD50N03S207ATMA1MOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
2,558 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 68 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IRF1010ESTRLPBFMOSFET N-CH 60V 84A D2PAK Infineon Technologies |
2,624 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFSL7440PBFMOSFET N CH 40V 120A TO-262 Infineon Technologies |
995 | - |
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HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135 nC @ 10 V | ±20V | 4730 pF @ 25 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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BSC016N03LSGATMA1MOSFET N-CH 30V 32A/100A TDSON Infineon Technologies |
2,491 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPD50N03S2L06ATMA1MOSFET N-CH 30V 50A TO252-31 Infineon Technologies |
4,653 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IPB100N08S2L07ATMA1MOSFET N-CH 75V 100A TO263-3 Infineon Technologies |
3,410 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 80A, 10V | 2V @ 250µA | 246 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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BSC0303LSATMA1TRENCH >=100V PG-TDSON-8 Infineon Technologies |
4,898 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 120 V | 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
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SPI20N60CFDXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
7,500 | - |
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- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |