制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF6794MTR1PBFMOSFET N-CH 25V 32A DIRECTFET Infineon Technologies |
300 | - |
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HEXFET® | DirectFET™ Isometric MX | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 47 nC @ 4.5 V | ±20V | 4420 pF @ 13 V | Schottky Diode (Body) | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRF1104PBFMOSFET N-CH 40V 100A TO220AB Infineon Technologies |
8,228 | - |
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HEXFET® | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPP100N04S303AKSA1MOSFET N-CH 40V 100A TO220-3 Infineon Technologies |
0 | - |
|
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OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.8mOhm @ 80A, 10V | 4V @ 150µA | 145 nC @ 10 V | ±20V | 9600 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPB100N04S2L03ATMA2MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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ISC0804NLSATMA1MOSFET N-CH 100V 12A/59A TDSON-8 Infineon Technologies |
2,053 | - |
|
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Ta), 59A (Tc) | 4.5V, 10V | 10.9mOhm @ 20A, 10V | 2.3V @ 28µA | 24 nC @ 10 V | ±20V | 1600 pF @ 50 V | - | 2.5W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
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IPP034N03LGXKSA1MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
197 | - |
|
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP100N08S207AKSA1MOSFET N-CH 75V 100A TO220-3 Infineon Technologies |
0 | - |
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OptiMOS™ | TO-220-3 | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP060N06NAKSA1MOSFET N-CH 60V 17A/45A TO220-3 Infineon Technologies |
474 | - |
|
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OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 45A (Tc) | 6V, 10V | 6mOhm @ 45A, 10V | 2.8V @ 36µA | 27 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB80N03S4L03ATMA1MOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
0 | - |
|
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2.2V @ 45µA | 75 nC @ 10 V | ±16V | 5100 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB100N08S207ATMA1MOSFET N-CH 75V 100A TO263-3 Infineon Technologies |
0 | - |
|
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 6.8mOhm @ 80A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |