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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSO072N03SMOSFET N-CH 30V 12A 8DSO Infineon Technologies |
4,219 |
|
Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 6.8mOhm @ 15A, 10V | 2V @ 45µA | 25 nC @ 5 V | ±20V | 3230 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
BUZ30AH3045AATMA1MOSFET N-CH 200V 21A D2PAK Infineon Technologies |
3,967 |
|
Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | 4V @ 1mA | - | ±20V | 1900 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRF6620TRPBFMOSFET N-CH 20V 27A DIRECTFET Infineon Technologies |
619 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.7mOhm @ 27A, 10V | 2.45V @ 250µA | 42 nC @ 4.5 V | ±20V | 4130 pF @ 10 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRFR48ZTRLPBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
10,055 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRF3805LMOSFET N-CH 55V 160A TO262 Infineon Technologies |
4,393 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 7960 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRFI3306GPBFMOSFET N-CH 60V 71A TO220 Infineon Technologies |
4,189 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 71A (Tc) | 10V | 4.2mOhm @ 43A, 10V | 4V @ 150µA | 135 nC @ 10 V | ±20V | 4685 pF @ 50 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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IPP120N08S404AKSA1MOSFET N-CH 80V 120A TO220-3 Infineon Technologies |
2,253 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 120µA | 95 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
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BSC046N02KSGAUMA1MOSFET N-CH 20V 19A/80A TDSON Infineon Technologies |
4,773 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 19A (Ta), 80A (Tc) | 2.5V, 4.5V | 4.6mOhm @ 50A, 4.5V | 1.2V @ 110µA | 27.6 nC @ 4.5 V | ±12V | 4100 pF @ 10 V | - | 2.8W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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SPW15N60CFDFKSA1MOSFET N-CH 650V 13.4A TO247-3 Infineon Technologies |
2,114 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
|
IPI100N12S305AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
4,898 |
|
Tabla de datos |
OptiMOS™ T | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 185 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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