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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPSA70R900P7SAKMA1MOSFET N-CH 700V 6A TO251-3 Infineon Technologies |
2,834 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | ±16V | 211 pF @ 400 V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
BSP321PL6327P-CHANNEL MOSFET Infineon Technologies |
37,989 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 980mA (Tc) | 10V | 900mOhm @ 980mA, 10V | 4V @ 380µA | 12 nC @ 10 V | ±20V | 319 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
|
IPU60R2K0C6AKMA1MOSFET N-CH 600V 2.4A TO251-3 Infineon Technologies |
4,513 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
BSC889N03MSGN-CHANNEL POWER MOSFET Infineon Technologies |
15,000 |
|
Tabla de datos |
OptiMOS™ 3 | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
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IPS65R1K0CEAKMA1MOSFET N-CH 650V 4.3A TO251 Infineon Technologies |
4,179 |
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Tabla de datos |
CoolMOS™ CE | TO-251-3 Stub Leads, IPAK | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
|
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BSC091N03MSCGATMA1POWER FIELD-EFFECT TRANSISTOR, 1 Infineon Technologies |
15,000 |
|
Tabla de datos |
SIPMOS® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
|
BSO065N03MSGSMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
2,500 |
|
Tabla de datos |
OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 40 nC @ 10 V | ±20V | 3100 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
|
|
BSP324L6327N-CHANNEL POWER MOSFET Infineon Technologies |
80,249 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9 nC @ 10 V | ±20V | 154 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
|
|
BSP603S2LNTN-CHANNEL POWER MOSFET Infineon Technologies |
30,123 |
|
Tabla de datos |
OptiMOS™ | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 5.2A (Ta) | 4.5V, 10V | 33mOhm @ 2.6A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1390 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
|
|
IPS60R1K0CEAKMA1CONSUMER Infineon Technologies |
2,352 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tj) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 61W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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