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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AIMBG120R020M1XTMA1SIC_DISCRETE Infineon Technologies |
864 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 15mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 468W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
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IMZC120R012M2HXKSA1IMZC120R012M2HXKSA1 Infineon Technologies |
215 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 129A (Tc) | 15V, 18V | 12mOhm @ 57A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -7V | 4050 pF @ 800 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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AIMZA75R008M1HXKSA1AUTOMOTIVE_SICMOS Infineon Technologies |
240 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 18 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-U02 |
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IMZA75R008M1HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
240 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 500 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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IPD030N03LF2SATMA1MOSFET N-CH 30V 160A DPAK Infineon Technologies |
2,000 |
|
Tabla de datos |
StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 99A (Tc) | 4.5V, 10V | 3.05mOhm @ 60A, 10V | 2.35V @ 40µA | 50 nC @ 10 V | ±20V | 2200 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
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DF17MR12W1M1HFB68BPSA1LOW POWER EASY Infineon Technologies |
33 |
|
Tabla de datos |
EasyPACK™ | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tj) | 15V, 18V | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149 nC @ 18 V | +20V, -7V | 4400 pF @ 800 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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BSS119NH7796SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
10,000 |
|
Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
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BSD214SNL6327SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
22,000 |
|
Tabla de datos |
OptiMOS™ 2 | 6-VSSOP, SC-88, SOT-363 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | ±12V | 143 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT363-6-6 |
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IRF8736PBFMOSFET N-CH 30V 18A 8SO Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.35V @ 50µA | 26 nC @ 4.5 V | ±20V | 2315 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSS119L6433SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
86,725 |
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Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5 nC @ 10 V | ±20V | 78 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
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