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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH8316TRPBFMOSFET N-CH 30V 27A/50A 8PQFN Infineon Technologies |
2,144 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 50A (Tc) | 4.5V, 10V | 2.95mOhm @ 20A, 10V | 2.2V @ 50µA | 59 nC @ 10 V | ±20V | 3610 pF @ 10 V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IPB093N04LGN-CHANNEL POWER MOSFET Infineon Technologies |
1,985 |
|
Tabla de datos |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 9.3mOhm @ 50A, 10V | 2V @ 77µA | 28 nC @ 10 V | ±20V | 2100 pF @ 20 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO-263-3-2 |
|
IPS80R2K4P7AKMA1MOSFET N-CH 800V 2.5A TO251-3 Infineon Technologies |
3,877 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5 nC @ 10 V | ±20V | 150 pF @ 500 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
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IPU80R2K4P7AKMA1MOSFET N-CH 800V 2.5A TO251-3 Infineon Technologies |
4,951 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 2.4Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5 nC @ 10 V | ±20V | 150 pF @ 500 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IPP065N03LGN-CHANNEL POWER MOSFET Infineon Technologies |
1,150 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.2V @ 250µA | 23 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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SPD04N60C2N-CHANNEL POWER MOSFET Infineon Technologies |
45,850 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-1 |
|
IPU60R1K4C6BKMA1MOSFET N-CH 600V 3.2A TO251-3 Infineon Technologies |
27,000 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 155°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
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IPU80R1K4CEBKMA1MOSFET N-CH 800V 3.9A TO251-3 Infineon Technologies |
2,970 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPP096N03LGHKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
11,500 |
|
Tabla de datos |
OptiMOS™ 3 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP60R1K4C6XKSA1MOSFET N-CH 600V 3.2A TO220-3 Infineon Technologies |
3,212 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 1.1 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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