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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPU50R3K0CEBKMA1MOSFET N-CH 500V 1.7A TO251-3 Infineon Technologies |
4,730 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
BSS119NH7978XTSA1SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
15,000 |
|
Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6 nC @ 10 V | ±20V | 20.9 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
|
BSL716SNH6327XTSA1MOSFET N-CH 75V 2.5A TSOP-6 Infineon Technologies |
2,667 |
|
Tabla de datos |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 2.5A (Ta) | 4.5V, 10V | 150mOhm @ 2.5A, 10V | 1.8V @ 218µA | 13.1 nC @ 10 V | ±20V | 315 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
|
IPU60R3K4CEAKMA1CONSUMER Infineon Technologies |
4,704 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.6A (Tj) | 10V | 3.4Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 93 pF @ 100 V | - | - | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
|
IPU50R1K4CEAKMA1MOSFET N-CH 500V 3.1A TO251-3 Infineon Technologies |
3,740 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2 nC @ 10 V | ±20V | 178 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
|
IPU60R2K1CEBKMA1MOSFET N-CH 600V 2.3A TO251-3 Infineon Technologies |
2,757 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
|
IPU50R950CEAKMA1MOSFET N-CH 500V 4.3A TO251-3 Infineon Technologies |
3,628 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
BSS340NWH6327XTSA1SMALL SIGNAL+N-CH Infineon Technologies |
2,771 |
|
Tabla de datos |
OptiMOS™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 880mA (Ta) | 4.5V, 10V | 400mOhm @ 880mA, 10V | 2V @ 1.6µA | 0.7 nC @ 10 V | ±20V | 41 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3 |
|
|
IPU50R950CEBKMA1MOSFET N-CH 500V 4.3A TO251-3 Infineon Technologies |
4,919 |
|
Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IPS135N03LGN-CHANNEL POWER MOSFET Infineon Technologies |
2,861 |
|
Tabla de datos |
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