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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB147N03LGATMA1MOSFET N-CH 30V 20A D2PAK Infineon Technologies |
3,714 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
BSP129L6906N-CHANNEL POWER MOSFET Infineon Technologies |
16,000 |
|
Tabla de datos |
SIPMOS® | TO-261-4, TO-261AA | Bulk | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7 nC @ 5 V | ±20V | 108 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
|
IPP114N03LGHKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
12,496 |
|
Tabla de datos |
OptiMOS™ 3 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
BSS84PH6433XTMA1MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies |
3,994 |
|
Tabla de datos |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5 nC @ 10 V | ±20V | 19 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23 |
|
IPL60R2K1C6SATMA1MOSFET N-CH 600V 2.3A THIN-PAK Infineon Technologies |
3,969 |
|
Tabla de datos |
CoolMOS™ C6 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 21.6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-2 |
|
SPD30N03S2L20GBTMA1MOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
2,786 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPS60R800CEAKMA1CONSUMER Infineon Technologies |
3,280 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tj) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 74W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
BSC0908NSN-CHANNEL POWER MOSFET Infineon Technologies |
6,400 |
|
Tabla de datos |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFR3910MOSFET N-CH 100V 16A DPAK Infineon Technologies |
3,070 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | - | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | - | 640 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPU80R2K8CEAKMA1MOSFET N-CH 800V 1.9A TO251-3 Infineon Technologies |
3,980 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12 nC @ 10 V | ±20V | 290 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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